Abstract
The piezoelectric cantilever resonator is used widely in many fields because of its perfect design, easy-to-control process, easy integration with the integrated circuit. The tip displacement and resonance frequency are two important characters of the piezoelectric cantilever resonator and many models are used to characterize them. However, these models are only suitable for the piezoelectric cantilever with the same width layers. To accurately characterize the piezoelectric cantilever resonators with different width layers, a novel model is proposed for predicting the tip displacement and resonance frequency. The results show that the model is in good agreement with the finite element method (FEM) simulation and experiment measurements, the tip displacement error is no more than 6%, the errors of the first, second, and third-order resonance frequency between theoretical values and measured results are 1.63%, 1.18%, and 0.51%, respectively. Finally, a discussion of the tip displacement of the piezoelectric cantilever resonator when the second layer is null, electrode, or silicon oxide (SiO2) is presented, and the utility of the model as a design tool for specifying the tip displacement and resonance frequency is demonstrated. Furthermore, this model can also be extended to characterize the piezoelectric cantilever with n-layer film or piezoelectric doubly clamped beam.
Highlights
The piezoelectric cantilever is one of the most important structures for micro-electromechanical system (MEMS) application and it has been used in atomic force microscopes, chemical sensors and biosensors, radio frequency (RF) switches, photon detectors, micromirrors, and energy harvesters [1,2,3,4,5,6,7]
The results show the error is no more than 7%, which means that the theoretical analysis can be used to describe the tip displacement of the piezoelectric cantilever
A model used to characterize the tip displacement and resonance frequency of piezoelectric cantilever with different width layers was proposed in this paper
Summary
The piezoelectric cantilever is one of the most important structures for micro-electromechanical system (MEMS) application and it has been used in atomic force microscopes, chemical sensors and biosensors, radio frequency (RF) switches, photon detectors, micromirrors, and energy harvesters [1,2,3,4,5,6,7]. Smits et al investigated the behavior of piezoelectric bimorphs for various mechanical boundary conditions based on the thermodynamic equilibrium and derived a set of constituent equations that can be adapted to any condition. This allows us to use the bimorph as a black box, without having to consider its internal movement or charges [10]. The multilayer model that can be used for predicting the tip displacement of the piezoelectric cantilever actuator with an arbitrary configuration of elastic and piezoelectric layers was proposed by Doeve and Huang [11,19]. PieTzoheelemcotrtiicvaCtaionntiolefvtehrisRwesoorknaistotroMdeovdeellop a model for piezoelectric multimorph can2t.i1le. vGeerosmwetirthy adnifdfeSrternutctwuirdetohf lPaiyeezorse,lewcthriicchCacanntilbeveeursReedsotonacthoarracterize the tip displacement and Irnestohneaanccteuafrlemquanenucfay.ctIunrtihnigs pwrorcke,ssthoef tthheeopreietizcoaellaenctdriscimcaunltailteevdere, ssuulcths oafs stihxedsetavnicde‐s awrdithprdoicffeesrsenotf gMeoEmMeStrCieAsPa,rethceompipeazroeedleactnrdicthcaenutitlielivtyerouf sthuealmlyoidneclluads easdfeosuigr‐nlatyoeorl foorr specifying the tip displacement and resonance frequency is demonstrated
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