Abstract
The phonon transport in silicon nanowire was simulated by Monte Carlo Method (MCM). The effect on the phonon transport of the boundary reflection mode, cross-section size and cross-section shape was studied. Analysis shows that diffuse reflection can result in phonon accumulation at the circumferential boundary. As the cross-section size decrease, the nonuniformity of the temperature distribution within the cross-section becomes more severe. When the area of the square cross-section silicon nanowire (SCSN) is equal to that of the circular cross-section silicon nanowire (CCSN), the thermal conductivity of them is more close to each other.
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