Modeling the optimum conditions for the formation of defect-free CVD graphene on copper melt

Abstract

The nucleation and growth of nuclei of graphene (graphene islets) on the surfaces of copper melts during catalytic CVD, i.e., the catalytic decomposition of a gas-phase carbon support, is considered. It is shown that on a copper melt the optimum combination of conditions for the preservation of islets with almost perfect hexagonal shape and the necessary conditions of the CVD-process are reached at the same time. The average distance between the islets and the dimensionless parameter that determines changes in the shape of islets is calculated. The maximum rate of decomposition of the carbon support at which this parameter simultaneously promotes the growth of defect-free islets and the maximum possible rate of growth of the graphene monolayer is determined.