Modeling the Gradual RESET of Phase Change Memory With Confined Geometry

Abstract

This work develops a model of the temperature and resistance for the RESET of confined phase change memory (PCM). The confined PCM, unlike the mushroom type, has heating inside the cell and higher resistance sensitivity to active region size. The ideal temperature profile is derived from a steady-state heat conduction formulation based on a quasi-3D approach. A thermal subcircuit is then proposed to implement the heating module, considering the thermoelectric effect (TEE) and temperature dependence of phase change materials, to obtain the active region size. The resistance of the irregular active region is then calculated using an integral method. Calibrated TCAD simulations and experimental data are used to verify the model with desired scalability and accuracy.