Abstract
The objective of this work was to study and model the output power degradation of infrared light emitting diodes (IREDs) with fast neutron irradiation. Three different commercial GaAs and AlGaAs IREDs were used in the study. Devices were characterized using current-voltage and light output measurements prior to and following a sequence of neutron irradiations. An analytical model is derived for LEDs which can be used to predict lifetime damage constant product τ 0 K from light output measurements as a function of neutron fluence. The model is derived for both abrupt and linear-graded p- n junctions when the light output measurements are made at a fixed current. The amount of light output degradation after neutron bombardment is found to be a function of operating current level, pre-irradiation value of lifetime, dominating current mechanism (i.e. diffusion current vs space-charge recombination current) and the physics of the junction (i.e. abrupt junction vs linear-graded junction).
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