Abstract
The effects of hydrogen on dose-rate sensitivity are simulated using a one-dimensional (1-D) model that incorporates the physical mechanisms contributing to dose-rate effects in the metal-oxide-semiconductor (MOS) system of gated lateral pnp (GLPNP) bipolar transistors. Calculations show that molecular hydrogen cracking at positively charged defects may be a key reaction relating hydrogen and dose rate response. Comparison to experimental data on bipolar devices is in good agreement with the dose rate calculations of interface trap buildup.
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