Abstract
Mathematical modeling of the distribution of Ga and Sb impurities in homogeneous (with respect to the content of the main components) single crystals of Ge–Si alloys, grown by double feeding of the melt, has been performed in the Pfann approximation. It is shown that the axial gradient of impurity concentration in Ge–Si crystals can be controlled in wide limits by changing the ratio of crystallization rate and the rates of feeding of the melt by silicon and germanium rods. The conditions for growing alloy single crystals, homogeneous both with respect to the content of the main components and to the impurity concentration distribution, have been determined.
Published Version
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