Abstract
Avalanche photodiodes (APDs), and single photon avalanche diodes (SPADs), with InP avalanche regions and InGaAs absorption regions, are used for detecting weak infrared light at ∼1.55 μm wavelength. These devices are often cooled to below room temperature during operation yet both validated simulation models and impact ionization coefficients that accurately describe the avalanche characteristics of InP are lacking in the temperature range of interest (200 K to room temperature). In this article we present an accessible, validated temperature dependent simulation model for InP APDs/SPADs. The model is capable of simulating avalanche gain, excess noise, breakdown voltage, and impulse current at 150–300 K. Temperature dependent ionization coefficients in InP, which may be used with other APD/SPAD simulation models, are also presented. The data reported in this article is available from the ORDA digital repository (DOI: 10.15131/shef.data.c.4373006).
Highlights
L IGHT detection and ranging (LiDAR) systems [1] for longrange three-dimensional imaging are increasingly important in applications such as autonomous vehicles, surveillance, remote sensing, and gas detection
A Simple Monte Carlo (SMC) model for the impact ionization process, first reported in 1999 [19], has recently been made available [20], with parameter files published for a range of avalanche materials including Si [21]
We comprehensively validated against a range of experimental data, including material characteristics such as saturation velocities, impact ionization coefficients for electrons and holes (α and β), as well as device characteristics such as M(V) and F(M) from multiple Avalanche photodiodes (APDs) structures
Summary
L IGHT detection and ranging (LiDAR) systems [1] for longrange three-dimensional imaging are increasingly important in applications such as autonomous vehicles, surveillance, remote sensing, and gas detection. A Simple Monte Carlo (SMC) model for the impact ionization process, first reported in 1999 [19], has recently been made available [20], with parameter files published for a range of avalanche materials including Si [21]. The SMC model is far less computationally intensive compared to Analytical and Full Band Monte Carlo models [22], [23], whilst incorporating sufficient impact ionization statistics (including dead space effects) to simulate a wide range of APD/SPAD designs, e.g., with thin avalanche regions and/or rapidly varying electric field profiles. We comprehensively validated against a range of experimental data, including material characteristics such as saturation velocities, impact ionization coefficients for electrons and holes (α and β), as well as device characteristics such as M(V) and F(M) from multiple APD structures. When simulating a given device design, the electric field profile at a given reverse bias was calculated using a 1D Poisson field solver
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