Modeling TANOS Memory Program Transients to Investigate Charge-Trapping Dynamics

Abstract

A novel physics-based drift-diffusion model of TANOS program transients is employed to investigate electron trapping and detrapping dynamics in a nitride trapping layer. Trapping process is found to be independent from the energy of injected electrons, while detrapping is dominated by trap-to-band tunneling. Modeling of the trapped-charge evolution during program transients allows one to extract physical characteristics of the traps and provides useful information for the optimization of TANOS memories.