Abstract
This paper presents a physics-based model of a silicon carbide bipolar junction transistor and verification of its validity through experimental testing. The Fourier series solution is used to solve the ambipolar diffusion equation in the transistor collector region. The model is realized using MATLAB and Simulink. The experimental results of static operation and also the simulated and experimental results of switching waveforms are given.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
