Abstract
AbstractThis paper outlines our current approach to utilize infrared reflectance spectroscopy for thin film measurement in the semiconductor industry. The multi-layer thickness and doping concentration of IC wafers can be determined by a single angle, unpolarized infrared reflectance measurement performed using Fourier transform infrared spectrometer. A computer algorithm, which matches theoretical tc measured infrared reflectance spectra, was successfully employed to determine multiple thin film properties.
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