Modeling silicon emitters for VLSI transistors

Abstract

The accuracy and reliability of predictions from numerical simulations of advanced bipolar transistors for VLSI applications depend on model input parameters. These parameters include the variations with doping and carrier concentrations in both n-type and p-type silicon of (1) the valance and conduction band edges, (2) the effective intrinsic carrier concentrations, (3) the minority carrier mobilities, and (4) the minority carrier lifetimes. This paper reviews recent advances in device physics for modeling the emitters of bipolar transistors with submicrometer dimensions and high concentrations of dopant ions and carriers.