Abstract
As the integrated luminosity delivered by the Large Hadron Collider increases, radiation damage effects are increasingly apparent in the response of the vertex detectors of the experiments. In this contribution, measurements of these effects are discussed for the Pixel Detector of the ATLAS experiment, which by the end of LHC Run 2 has received a fluence of up to 1015neqcm−2. Measurements of leakage current, Lorentz angle, and charge collection efficiency are discussed and compared to predictions from the Hamburg radiation damage model, TCAD based calculations, and a detailed simulation of the pixel sensor response which accounts also for the modifications to the electric field and charge collection efficiency induced by the radiation damage.
Highlights
Effects of Radiation damageThe effects of radiation in a silicon sensor bulk are primarily caused by inelastic scattering of hadrons which displaces atoms from their lattice sites
: As the integrated luminosity delivered by the Large Hadron Collider increases, radiation damage effects are increasingly apparent in the response of the vertex detectors of the experiments
Measurements of leakage current, Lorentz angle, and charge collection efficiency are discussed and compared to predictions from the Hamburg radiation damage model, TCAD based calculations, and a detailed simulation of the pixel sensor response which accounts for the modifications to the electric field and charge collection efficiency induced by the radiation damage
Summary
The effects of radiation in a silicon sensor bulk are primarily caused by inelastic scattering of hadrons which displaces atoms from their lattice sites. The resulting lattice defects create energy levels in the band gap. At room temperature these change with time due to the thermal motion of lattice defects, in a process called annealing. There are three main consequences on the properties of a silicon sensor as a particle detector : the leakage current increases; the effective doping concentration changes with a net increase of acceptor-like states, and the signal is reduced due to trapping of electrons and holes by lattice defects. For the leakage current and effective doping concentration, measurements are compared to the prediction of the Hamburg model [12].
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