Modeling pulsed-laser melting of embedded semiconductor nanoparticles

Abstract

Pulsed-laser melting (PLM) is commonly used to achieve a fast quench rate in both thin films and nanoparticles. A model for the size evolution during PLM of nanoparticles confined in a transparent matrix, such as those created by ion-beam synthesis, is presented. A self-consistent mean-field rate equations approach that has been used successfully to model ion beam synthesis of germanium nanoparticles in silica is extended to include the PLM process. The PLM model includes classical optical absorption, multiscale heat transport by both analytical and finite difference methods, and melting kinetics for confined nanoparticles. The treatment of nucleation and coarsening behavior developed for the ion beam synthesis model is modified to allow for a nonuniform temperature gradient and for interacting liquid and solid particles with different properties. The model allows prediction of the particle size distribution after PLM under various laser fluences, starting from any particle size distribution including as-implanted or annealed simulated samples. A route for narrowing the size distribution of embedded nanoparticles is suggested, with simulated distribution widths as low as 15% of the average size.