Modeling Plasmon-Induced Hot-Carrier Transfer

Abstract

In this issue of Chem , Zhang et al. use first-principle simulations (i.e., no empirically adjustable parameters) to elucidate the detailed mechanisms of plasmon-induced hot-carrier transfer at a heterojunction interface between a plasmonic gold nanomaterial and a semiconductor. Together with earlier work by Long and Prezhdo, this study shows how the donor-acceptor interaction at the interface determines the mechanism by which plasmonic excitations lead to hot-electron transfer at interfaces.