Abstract
In order to achieve a new kind of optical transistor model, we construct a parity-time (PT) symmetry coupled cavity structure. The gain cavity G is made of semiconductor InGaAsP doped with quantum well and the loss cavity is made of the same material as G but periodically inserted by graphene sheets. Through a parameter optimizing, the structure reaches the PT-symmetry pole state with a huge transmittance. The voltage on the graphene sheets as an input signal can modulate the pole state and results in an amplification output of transmittance. Through proper static working points, the structure can achieve the amplification in phase, out phase and of doubling frequency.
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