Abstract
In this work, we present physics-based numerical modeling of experimental time-dependent optical second harmonic generation data from an oxide/semiconductor (SiO2/Si) interface. A comprehensive numerical solution to the Poisson–Boltzmann equation has been developed here, using the Newton–Raphson method at different time instances. It incorporates the trapping behavior of photo-excited charge carriers at the silicon dioxide/silicon (SiO2/Si) interface, within the silicon dioxide (SiO2) and at the SiO2 surface, in order to model the second harmonic photon count data obtained from our in-house experimental setup. This yields a quantitative analysis of the SiO2/Si interface, oxide, and surface charge densities, and provides a contact-less and non-invasive optical technique for oxide/semiconductor interface characterization.
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