Modeling of trap-assisted tunneling on performance of charge trapping memory with consideration of trap position and energy level**Project supported by the National Natural Science Foundation of China (Grant Nos. 61404005, 61421005, and 91434201).

Abstract

In this work, the trap-assisted tunneling (TAT) mechanism is modeled as a two-step physical process for charge trapping memory (CTM). The influence of the TAT mechanism on CTM performance is investigated in consideration of various trap positions and energy levels. For the simulated CTM structure, simulation results indicate that the positions of oxide traps related to the maximum TAT current contribution shift towards the substrate interface and charge storage layer interface during time evolutions in programming and retention operations, respectively. Lower programming voltage and retention operations under higher temperature are found to be more sensitive to tunneling oxide degradation.