Abstract
Different type-II InGaAs/GaAsSb quantum well design structures on InP substrate for mid-infrared emission has been modeled by six band k•p method. The dispersion relations, optical matrix element, optical gain and spontaneous emission rate are calculated. The effects of the parameters of quantum wells (thickness, composition) and properties of cladding layers were investigated. For injected carrier concentration of 5×10<sup>12</sup> cm<sup>-2</sup>, peak gain values around 2.6-2.7 μm wavelengths of the order of 1000 cm<sup>-1</sup> can be achieved, which shows that type-II InGaAs/GaAsSb quantum wells are suitable for infrared laser operation beyond 2μm at room temperature.
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