Abstract
Modeling of the electron charge distribution for very fine nanograins (≈1 nm) has been addressed via a semi-classical method such as the Thomas–Fermi approximation. This method takes into account quantum effects of electron confinement within a nanograin and allows one to calculate the height of the inter-grain energy barrier, which is a physical quantity that determines the conductive properties of semiconductor metal-oxides. Comparison with non-quantum models and with experimental measurements is given.
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