Abstract
This paper investigates the impact of the source/drain regions of MOSFETs on the short channel effects, by using numerical simulations as well as analytical modeling. First, the evidence of different SCEs when including or excluding S/D regions is presented using drift-diffusion simulation. It is then shown that this difference is related to the different boundary conditions used in the simulations. This different behavior is then modeled in terms of a shift in the built-in potential at the channel-S/D junction, which allows to avoid the overestimation of the SCEs, while keeping the same analytical modeling framework.
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