Modeling of Terahertz Radiation from InSb and InAs

Abstract

In this paper the THz radiation dynamics of InSb and InAs, two typical narrow band semiconductors, was investigated using the ensemble Monte Carlo method. Our simulations indicated that the single mechanism of current surge only can result in small difference of THz emission efficiency for InSb and InAs. The great advantage of InAs over InSb in THz emission efficiency that was found in a published work is possibly due to the mechanism of optical rectification. In addition, under low excitation level, we found the emission efficiency of InSb is advantage over that of InAs, but under high excitation level, the result is reversed. On the other hand, through the Fourier transforms of temporal THz waveforms we found that the main frequency of THz pulses from InAs is always higher than that of InSb.