Abstract
The Smart-Cut technology consists in the increasing of pressure imposed by the diffusion of hydrogen ions in the silicon substrate leading to a wafer splitting. In the present work, we studied the evolution of the stress field in the crystalline lattice of silicon, the diffusion of hydrogen ions as well as the growth and coalescence of cavities. Meanwhile, we test several models and simulate these phenomena by a numerical approach, in order to compare its results to experimental observations.
Highlights
The Smart-Cut technology is an industrial process widely used in the manufacturing field of microelectronic components with the semiconductor materials, to produce high quality silicon-onisolator (SOI) in high volume [1]
The coalescence effect would occur, what we try to check taking into account a mechanical coupling with diffusion
Investigations have been performed on the modeling and simulation of the Ostwald mechanism
Summary
The Smart-Cut technology is an industrial process widely used in the manufacturing field of microelectronic components with the semiconductor materials, to produce high quality silicon-onisolator (SOI) in high volume [1]. We studied different geometrical parameters and different initial conditions imposed on hydrogen penny-shape microcracks We implemented this model in finite element analysis software (Abaqus) to calculate the concentration fields of hydrogen. We manage to calculate with numerical methods the mechanical stresses developing around hydrogen penny-shape microcracks/defects and the geometric evolution of those defects in the wafer.
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