Abstract
We propose a theoretical model to describe the strain-induced linear electro-optic (Pockels) effect in centro-symmetric crystals. The general formulation is presented and the specific case of the strained silicon is investigated in detail because of its attractive properties for integrated optics. The outcome of this analysis is a linear relation between the second order susceptibility tensor and the strain gradient tensor, depending generically on fifteen coefficients. The proposed model greatly simplifies the description of the electro-optic effect in strained silicon waveguides, providing a powerful and effective tool for design and optimization of optical devices.
Highlights
In recent years, strain engineering is emerging as a new frontier in micro and nano-technology
Tensile strained germanium and strained silicon are attracting a great deal of interest
Tensile strained germanium-on-silicon can be used as active material for the shortwavelength infrared light and it can be an efficient solution for manufacturing monolithic lasers and optical amplifiers [3, 4]
Summary
Strain engineering is emerging as a new frontier in micro and nano-technology. The final result will be a simple linear relation between the second order effective susceptibility tensor and the strain gradient tensor (weighted by the electromagnetic modes), depending generically on fifteen independent coefficients that can in principle be obtained from experimental measurements. Once these coefficients are known, the computation of the electro-optic effect is reduced to a standard strain computation and electromagnetic mode analysis, providing an easy framework for the optimization of optical devices
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