Abstract
The present study shows that simple forms for the generation functions, if connected to appropriate electronic path (electron range), can be successfully used to describe the collection efficiency in EBIC devices. Both uniform and point-like source generation functions are considered here and for which two phenomenological electronic paths, depending on the incident beam energy, are obtained. Complexities that might arise solving the continuity equations are, thus, avoided. The calculations were performed for the Schottky diodes Au/Ge.
Highlights
The Electron Beam Induced Current (EBIC) is one of the frequently used methods in the Scanning Electron Microscopy (SEM) to investigate the electrical properties of defects in semiconductors[1]
The collection efficiency curves (Eo) are calculated for the modified Gaussian gG and the polynomial gPL generation forms of carriers which are coupled to their adequate electronic paths
The curve 1 and the curve 2 have been taken as reference and this designation will be adopted in the remainder of this paper
Summary
The Electron Beam Induced Current (EBIC) is one of the frequently used methods in the Scanning Electron Microscopy (SEM) to investigate the electrical properties of defects in semiconductors[1]. The collected current is mainly a function of the minority carrier diffusion length which is related to the carrier lifetime These two parameters can give us some handle on the material quality. There are, many factors that influence the measured current, such as carrier diffusion, carrier recombination, the excitation geometry and others which might render the quantitative interpretation of the experimental results somehow difficult. In this context, different approaches have been proposed for the modelling of the induced current and the subsequent determination of the carriers diffusion and recombination parameters following an adequate fit of experimental data
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