Modeling of SiC transistor with counter-doped channel

Abstract

In this paper, we present a modeling framework to simulate the electrical characteristics of SiC MOSFET. Our model also describes the mobility improvement with counter doping in channel. Our analyses show improved drive current and degraded/lower threshold voltage with a counter-doped channel. To this end, we investigate the impact of varying the doping concentrations of the counter-doped region and the underlying p-well for optimum device performance.