Abstract
This paper compares two different analytic solutions to the 2-D potential in double-gate MOSFETs in subthreshold: Green's function method and scale length model. Both models produce closed-form potential functions for every point in Si based on rigorous approaches to Poisson's equation with boundary conditions. It is shown that despite the vastly different mathematical equations, the I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</sub> -V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gs</sub> characteristics generated from each model are completely consistent with each other and with Technology Computer Aided Design (TCAD). Testing examples include undoped and highly doped cases of both polarities, junction and junctionless. Also included is a case of severe short-channel effects.
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