Modeling of self-assembled inorganic oxide semiconductor based electric-double-layer thin film transistors

Abstract

The effects of the channel thickness on the parameters used for subgap density of states (DOS) modeling for self-assembled oxide semiconductor based electric-double-layer (EDL) thin film transistors (TFTs) with high specific gate capacitance (>1 μF/cm2) were investigated. For indium-tin-oxide-based EDL TFTs, the channel current is affected by the channel thickness. The subgap DOS model with different parameters for different channel thicknesses, together with equations based on device physics, can explain such channel thickness dependence. Our study might lead to a better understanding of inorganic semiconductor EDL TFTs for improved device control.