Modeling of Reverse Bias Differential Charge Experiments in Amorphous Silicon

Abstract

ABSTRACTAn analytic model is developed for differential charge measurements which avoids the use of the depletion approximation. In this experiment the incremental charge in the device is calculated as the difference between the total steady-state junction charge at two nearly equal voltages, similar to a very low frequency capacitance Measurement. All of the calculations, including an iteration to find the bulk Fermi level, can easily be performed using a spreadsheet program on a personal computer. It is shown that the results of these calculations agree extremely well with simulations performed with a complete numerical device simulator. Thus, the model useful for the analysis of experimental data