Abstract
The modeling of residual stresses generally deals with the calculation of the thermal ones alone. In the present work, a model is proposed, where intrinsic residual stresses are calculated explicitly. It is based on the Tsui–Clyne model, which was modified in order to describe the deposition of n different deposited layers on the substrate with the same set of equations as in a mono-layer system. For that we introduced the notion of “virtual substrate” and “effective parameters”. The calculated values are compared with experimental results obtained for the following systems: Ta/Si, Mo/Si, Al/SiO x /Si and Pd/SiO x /Si. The depositions were performed by electron beam evaporation onto Si and Si/SiO x (1 0 0) substrates with varying film thickness.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
