Abstract
The reduction of electron mobility in MOSFET with HfO 2/SiO 2 gate stack is analyzed using a model for remote Coulomb scattering (RCS) due to charges fixed at HfO 2/SiO 2 interface. The RCS limited mobility is calculated using the Kubo-Greenwood approach from 300K down to 100K. Our results show that a single value of charge density perfectly reproduce the degradation of mobility with an interfacial layer varying from 2nm down to 1nm in all the range of temperature. It means that soft optical phonon is not the limiting factor for the mobility and is probably masked by the large amount of charges.
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