Abstract
A compact model for the quasi-ballistic cylindrical gate-all-around MOSFET was developed by supplementing the ballistic framework previously disclosed by us with an original energy quantization model. The ballistic mobility is calculated for both degenerate and nondegenerate conditions under collision-free transport. The conventional device electric current showed a remarkable decrease compared with the quasi-ballistic current. The results so obtained have been compared with those obtained from Sentarus device simulator and are found to be in good agreement.
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