Abstract

The paper presents the results of numerical simulation of aluminum ablation process that is caused by a series of incident nanosecond pulses on a wavelength λ=1064 nm. The mechanism of normal evaporation and the effect of plasma shielding were taken into account. As a result of mathematical modeling the ablation depth was obtained. It is shown that plasma shielding reduces the effectiveness of ablation process much more than cooling of the aluminum surface between pulses.

Highlights

  • Numerous studies were devoted to the application of pulsed laser ablation in production of nanomaterials and clusters, pulsed laser deposition, spectroscopy, laser micromachining, chemical analysis [1]–[3]

  • A significant material removal occurs by thermal evaporation mechanism when a surface temperature is greater or equal to the boiling point of substance at atmospheric pressure

  • In the process of pulsed laser ablation plasma cloud is formed above the metal surface, which shields the incident radiation [8]

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Summary

Introduction

Numerous studies were devoted to the application of pulsed laser ablation in production of nanomaterials and clusters, pulsed laser deposition, spectroscopy, laser micromachining, chemical analysis [1]–[3]. Laser micromachining of metals has found the most widespread industrial application that contributed to massive experimental and theoretical studies. The objective of those investigations was obtaining the dependence of ablation depth from the laser parameters (pulse duration and frequency, laser intensity, wavelength, etc.). Since most of nanosecond pulsed industrial laser micromachining systems operate in the following parameters range: 4.5 ns ≤ τ ≤ 50 ns, 107W/(cm2) ≤ I ≤ 1011 W/(cm2), 10 Hz ≤ f ≤ 105 Hz, the necessity for a detailed study of laser-material interaction processes at these regimes seems apparent [6], [7]. In the process of pulsed laser ablation plasma cloud is formed above the metal surface, which shields the incident radiation [8]. Tvap is considered to be in a range of 0.85Tc ≤ Tvap ≤ 0.9Tc [8]

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