Modeling of polygonal half–loops dislocations in silicon single crystal using X–ray diffraction topo–tomography data

Abstract

Topo-tomographic methods for identifying defects in semiconductors are the most effective among X-ray methods. Combining experimental data with model calculations makes it possible to determine various parameters and properties of crystal structures. In this work, using X-ray diffraction topo-tomography, images of the dislocation half-loop in Si (111) crystal were obtained. The Takagi-Taupin equations have been used to modeling the topograms. A quantitative comparison of the images made it possible to determine the direction of the Burgers vector.