Abstract
In this paper, we study the effect of polarization on the performance of InGaN solar cells. By using the APSYS software, we show that the performance of common device designs is adversely affected by the interface charges between the contact layers and absorber. An improved design based on graded layers in the $${[0 0 0\overline{1}]}$$ or N-face growth direction is shown to be almost immune to these effects.
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