Abstract
Research on photovoltaic solar cells has always been exciting due to its clean and green nature. However, the quest for alternative approaches to the design of highly efficient solar cells with optimal cost-efficiency ratios has also been progressing. CuSbS2-based ternary compound semiconductor is a promising candidate for the ultrathin film photovoltaic cell due to the high absorption coefficient, low cost, and earth abundant which makes it suitable to use as a thin-film absorber layer. The impact of various parameters such as thickness, bandgap, band alignment, temperature, carrier concentration, and bandgap grading has been studied to optimize the overall performance of the solar device. In present work, we have adopted the Solar Cell Capacitance Simulator in One Dimension (SCAPS-1D) simulation approach to the design of CuSbS2 absorber-based solar heterostructure cells to boost the electrical properties of the solar cell.
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