Year-end Sale % OFF 
Abstract
SUMMARY In this paper, we develop an analytical model for the prediction of the peak voltage and the current in the current–voltage characteristics of nanowire resonant tunneling heterostructures. The model is applied in the case study of double-barrier InAs/InP devices, and the results are obtained from numerical carrier transport calculations, in terms of structural parameters such as the nanowire radius as well as the width of the barriers and quantum well. Copyright © 2013 John Wiley & Sons, Ltd.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
