Modeling of Nonvolatile Quantum Dot Gate Structures Operating at Millimeter Wave Frequencies for Memory Applications

Abstract

This paper models electrical characteristics of quantum dot nonvolatile memory cells during READ and WRITE operations. Capacitance-voltage characteristics are calculated by self-consistently solving the Schrodinger and Poisson equations. The memory access time for a 32 kb NOR array is 73 ps, which reduces to 13 ps in lightly-doped sheath (LDS) structures. The results show that a change in the quantum dot charge has a strong effect on drain to source current. The calculated cutoff frequency fT is 135 GHz for a 0.1 μm channel length Si field-effect memory structures. The application of a quantum dot memory cell as a programmable resistor in RF circuits is presented. By changing the quantum dot charge, the resistor values can be changed by 25%.