Abstract
Threshold voltage shift ( $\Delta \text{V}_{\mathrm{ T}}$ ) due to Negative Bias Temperature Instability (NBTI) in p-MOSFETs is modeled using the BTI Analysis Tool (BAT) framework. The $\Delta \text{V}_{\mathrm{ T}}$ time kinetics during and after DC and AC stress at different stress ( $\text{V}_{\mathrm{ GSTR}}$ ) and recovery ( $\text{V}_{\mathrm{ GREC}}$ ) biases, temperature (T), pulse duty cycle (PDC) and frequency ( ${f}$ ) is modeled. The influences of Nitrogen content (N%) in the gate insulator stack, Germanium content (Ge%) in the channel, and mechanical strain due to dimension scaling and layout are explained. The framework is used to analyze measured data from planar, Fully Depleted Silicon on Insulator (FDSOI) and FinFET devices having Silicon (Si) and Silicon Germanium (SiGe) channels.
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