Modeling of multicolor asymmetric quantum well infrared photodetector

Abstract

This paper presents an analytical model of an asymmetric quantum well infrared photodetector (AQWIP). The process of electron diffusion is neglected while developing this model. The effects of variation of barrier width, doping and temperature on dark current, photocurrent and noise are evaluated. The circuit model for AQWIP is developed to study the performance of the device, taking into consideration the bias dependence of the dark current, photocurrent and noise. The performance is evaluated by obtaining the transient and small signal analysis using the SPICE simulator.