Abstract
Among the ferroelectric thin films used in field-effect transistor devices; the ferroelectric copolymer of polyvinylidene fluoride (PVDF) (–CH2–CF2–), with trifluoroethylene (TrFE) (–CHF–CF2–), has distinct advantages, including low dielectric constant, low processing temperature, low cost, and compatibility with organic semiconductors. The operation of a metal-ferroelectric-insulator-semiconductor structure with P(VDF-TrFE) as the ferroelectric layer was analyzed and optimized by numerical solution of the Miller and McWhorter model. A model device consisting of 20 nm PVDF/TrFE on a 10-nm-thick high-k dielectric buffer exhibits a memory window of 5 V with an operating voltage of ±15 V. The operating voltage can be reduced to ±12 V by reducing the ferroelectric and dielectric thicknesses to 10 and 5 nm, respectively.
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