Abstract
A mathematical model for low temperature oxidation of strained Si 1− x Ge x alloys has been developed. Based on the growth kinetics of ultrathin (<10 nm) SiO 2/GeO 2 on strained- Si 1− x Ge x layer, the growth of oxide is simulated using analytical methods. The main feature of the model is the assumption of simultaneous oxidation of germanium and silicon when exposing the Si 1− x Ge x to an oxidizing atmosphere. It is found that the model gives a good account of the oxidation process. Kinetic parameters, i.e., interfacial reaction rate constant for oxidation of germanium and diffusion coefficient of silicon (germanium) in Si 1− x Ge x , are extracted by fitting the simulation to the experimental data. The developed model is implemented in commercial process simulator SILVACO-ATHENA for SiGe MOSFET simulation.
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