Year-end Sale % OFF 
Abstract
A detailed 3D simulation of a large-scale industrial cold-wall horizontal reactor for epitaxial silicon deposition is presented. Simulations showed that realistic inlet jets description is necessary to obtain a reliable picture of the system. Different chamber geometries are analyzed with the aim of reducing the “memory effects” during the dopant switching in junction production inside the same reactor chamber without wafers loading and unloading. Configurations inducing a graded gas expansion have been identified as contributing to the solution of the problem.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
