Modeling of junction formation in scaled Si devices

Abstract

In this article, modeling of junction formation in scaled Si device is shown. An atomistic kinetic Monte Carlo (KMC) diffusion modeling is used for the analysis of dopant diffusion and defects during shallow junction formation processes. Dopant diffusion and defect evolution during sub-millisecond non-melt laser annealing (NLA) are studied in both experiments and an atomistic kMC diffusion modeling. Pre-amorphization implant is often used for ultra shallow junction formation. It is shown that Solid Phase Epitaxial Regrowth (SPER) annealing stage plays an important role for dopant diffusion in junction formation process. As Ge implant energy is increased, damage structure and IV composition of Amorphous Pockets are changed and this affects the dopant diffusion and activation behavior. KMC simulations show that B, As deactivation is induced by the formation of dopant-defect complexes, such as B n I m , As n V m , As n I m , As n , during millisecond annealing time range. Both experiments and KMC show that defect evolution during millisecond annealing time range. Fluorine, Carbon co-implant effects are also modeled using KMC.