Abstract
One of the important components in many RF ICs applications is the transformer. It is very important that transformer has optimal design, that means, optimal geometry with the best possible characteristics. Because of the wide transformer applications in radio-frequency silicon-based circuits, modeling for transformers has become more and more essential. The modeling of planar transformer for very high frequencies is the subject of this paper. Square, polygonal and circular shapes of the planar windings are the important difference regarding transformer topologies. In this work, comparison was restricted to a square and an octagonal shape of the windings. In this study, we opted for calculation method developed by Wheeler to evaluate the inductance of different planar geometrical shapes of transformer windings. Besides, we determined the geometrical parameters of the transformer and from its π-electrical model; we highlighted all parasitic effects generated by stacking of different material layers. By using the S-parameters, we calculated the technological parameters. The important characteristics of a transformer are its inductances values and its parasitic capacitances and resistances, which determine its Q factor and self-resonant frequency. Furthermore, we carried out the electromagnetic simulation using COMSOL Multiphysics 4.3 software to show current density and electromagnetic field in the windings of the transformer for high frequencies.
Highlights
Perpetual miniaturization of electronic components makes it possible to load more and more portable consumer equipment and accessories in various fields, transport, telecommunication, computer science, ...etc
We present the model of a transformer whose windings are of octagonal planar shape (Figure 9a)
The transformer is composed of two octagonal winding superimposed on a ferrite layer and isolated by a dioxide layer of silicon dioxide, all the layers of the different materials are superimposed on a layer of silicon, which serves as a substrate, this transformer operates at a high frequency of the order of 100 MHz
Summary
Perpetual miniaturization of electronic components makes it possible to load more and more portable consumer equipment and accessories in various fields, transport, telecommunication, computer science, ...etc. The whole integration of energy conversion devices designed to create compact power circuits is experiencing strong technological constraints. It is the same for the inductive and capacitive components integration due to their encumber in surface and volume. The first implementation of monolithic inductors on silicon substrates for mixed-signal radio-frequency ICs circuits was achieved [1, 2], making the use of integrated passive components practical. Monolithic transformers have been successfully implemented in RFIC designs [5, 6] enabling the implementation of high frequency circuits such as mixers, voltage-controlled oscillators, low noise amplifiers. Because of the wide application of transformers in RF systems circuits, modelling for transformers has become more and more essential
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