Abstract
For InSb whiskers grown by the chemical transport reaction (CTR) method in the InSb-J2 system the relation between whisker diameter (d), crystallization zone temperature (Tcr) and thermoprocessing time (t) is found in a certain range of these values. This relation is of practical importance when whiskers are grown for using as active areas of magnetic sensors. The dependence of the InSb and InAs whisker growth rate on the diameter is also considered, main kinetic parameters of the whisker crystallization are determined. In particular, the crystallization energy for InSb and InAs whiskers is equal to 63.9 and 147 kJ mol−1, respectively, that confirms the whisker formation by CTR-method in accordance with the vapour-liquid-crystal mechanism.
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