Abstract
A superconducting flux flow transistor (SFFT) with three channels and nanobridges was successfully fabricated by electron beam (e-beam) lithography and an Ar ion milling technique. The SFFT is composed of three weak links with a nearby gate current line. We explain the process to obtain the equation for the current-voltage characteristics and describe the method to induce external and internal magnetic fields by Biot–Savart's law. The equation can be used to predict the current-voltage curves for the 3-channel SFFT fabricated using e-beam lithography. I–V characteristics were simulated to analyze the SFFT with three channels and nanobridges by a Matlab program. From the I–V characteristics equation of the 3-channel SFFT, the drain currents and the output voltages as the gate current is applied are graphically compared with the measured value and the simulation value. The simulated I–V curves were in good agreement with the measured curves of the 3-channel SFFT with nanobridges.
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