Abstract
An analytical model for minority-carrier transport and recombination in quasi-neutral regions at arbitrary injection levels is presented. The proposed approach retains a general dependence of the transport parameter on the doping concentration, and can be thus applied to arbitrary doping profiles. It also includes heavy doping effects and injection-dependent recombination mechanisms. Simple closed-form analytical expressions are derived for the minority-carrier currents in bipolar transistors, and for the effective recombination velocity of high-low junctions.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
