Modeling of high power 0.3 THz IMPATT oscillator based on 3C-SiC and growth of 3C-SiC on Si (100) substrate for possible IMPATT fabrication

Abstract

The Single Drift Region ( SDR, p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> n n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> type) cubic silicon carbide (3C-SiC/R-SiC) based IMPATT diode is designed and studied for the first time at terahertz (THz) frequency region. The simulation predicts that the device is capable of generating output RF power of 63.0 W with 13% efficiency at 0.330 THz. The effect of parasitic series resistance on the RF power level of the device is further simulated. The presence of series resistance (2.5 Ω) reduces RF power output by 8.7%. The simulation clearly establishes the application possibility of 3C-SiC as a base material for high power THz IMPATT device. Single crystalline, epitaxial 3C-SiC films are deposited on silicon (Si) (100) substrates by rapid thermal chemical vapour deposition (RTPCVD) at a temperature as low as 800°C using a single precursor methylsilane, which contains Si and C atoms in the same molecule. No initial surface carbonization step is required in this method. A p-n junction has been grown successfully and the characterization of the grown 3C-SiC film is reported in this paper.