Abstract
Graphene, having extraordinary electronic and optical properties at THz frequencies, can be used in the design and development of miniaturized components, devices, and integrated circuits. Model of graphene-based transmission lines and their discontinuities play a crucial role in the realization of THz integrated circuits, which is not readily available in the literature. This paper reports the characteristics of graphene film deposited over a SiO2/Si wafer. Transmission line characteristics of graphene-based plasmonic coplanar waveguide (GPCPW) on SiO2/Si wafer have been determined from the electromagnetic modeling of the structure. Discontinuities in the GPCPW such as open end, series gap, and step junction have also been analyzed to obtain their lumped element electrical equivalent. Closed-form expressions are developed so that it can be used in the circuit design at later stage. It has been observed that GPCPW transmission lines have very high characteristic impedance values (∼1000–2500 Ω) which are not possible in non-graphene transmission line structures.
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